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SMBTA06UPNE6327 PDF预览

SMBTA06UPNE6327

更新时间: 2024-11-18 15:51:47
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
7页 523K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN

SMBTA06UPNE6327 技术参数

是否Rohs认证: 符合生命周期:End Of Life
零件包装代码:SC-74包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.34
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

SMBTA06UPNE6327 数据手册

 浏览型号SMBTA06UPNE6327的Datasheet PDF文件第2页浏览型号SMBTA06UPNE6327的Datasheet PDF文件第3页浏览型号SMBTA06UPNE6327的Datasheet PDF文件第4页浏览型号SMBTA06UPNE6327的Datasheet PDF文件第5页浏览型号SMBTA06UPNE6327的Datasheet PDF文件第6页浏览型号SMBTA06UPNE6327的Datasheet PDF文件第7页 
SMBTA06UPN  
NPN / PNP Silicon AF Transistor Array  
High breakdown voltage  
4
3
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
Transistor in one package  
5
2
1
6
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C1  
6
B2  
E2  
4
5
Tape loading orientation  
TR2  
Marking on SC74 package  
TR1  
Top View  
(for example W1s)  
corresponds to pin 1 of device  
6
5 4  
1
2
3
W1s  
E1  
B1  
C2  
EHA07177  
Position in tape: pin 1  
opposite of feed hole side  
1
2
3
Direction of Unreeling  
SC74_Tape  
Type  
SMBTA06UPN  
Marking  
s2P  
Pin Configuration  
1=E 2=B 3=C 4=E 5=B 6=C SC74  
Package  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Symbol  
Value  
80  
80  
4
500  
1
Unit  
V
V
V
V
CEO  
CBO  
EBO  
mA  
A
I
C
Peak collector current, t 10 ms  
I
p
CM  
100  
200  
330  
mA  
Base current  
Peak base current  
Total power dissipation-  
I
B
I
BM  
mW  
°C  
P
tot  
T 115 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1
2011-10-05  

SMBTA06UPNE6327 替代型号

型号 品牌 替代类型 描述 数据表
SMBTA06U INFINEON

类似代替

NPN Silicon AF Transistor Array
SMBTA06UPN INFINEON

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NPN/PNP Silicon AF Transistor Array
HBDM60V600W-7 DIODES

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