Datasheet > SMBTA14_07

SMBTA14_07

更新时间： 2024-11-18 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	71K
描述
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage

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SMBTA14_07 数据手册

SMBTA14/MMBTA14

NPN Silicon Darlington Transistor

• High collector current

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SMBTA14/MMBTA14

s1N

SOT23

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

300

500

100

200

330

Peak collector current

Base current

Peak base current

Total power dissipation-

°C

tot

T ≤ 81 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 210

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-19

12 3 4 5 6

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