Datasheet > SMBTA14 / MMBTA14

SMBTA14 / MMBTA14

更新时间： 2024-11-19 14:53:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体管
页数	文件大小	规格书
7页	525K
描述
PNP 硅达灵顿晶体管

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中文翻译

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数据手册

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SMBTA14 / MMBTA14 数据手册

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SMBTA14/MMBTA14

NPN Silicon Darlington Transistor

• High collector current

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

s1N

Pin Configuration

Package

SOT23

SMBTA14/MMBTA14

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

300

500

100

200

330

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

Peak collector current, t ≤ 10 ms

Base current

Peak base current

Total power dissipation-

°C

tot

T ≤ 81 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 210

Unit

K/W

thJS

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2011-12-19

12 3 4 5 6 7

中文翻译

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