Datasheet > SMBTA06UPNE6327HT

SMBTA06UPNE6327HT

更新时间： 2024-11-19 05:46:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	77K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN

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SMBTA06UPNE6327HT 数据手册

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SMBTA06UPN

NPN / PNP Silicon AF Transistor Array

• High breakdown voltage

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP

Transistor in one package

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Tape loading orientation

TR2

Marking on SC74 package

TR1

Top View

(for example W1s)

corresponds to pin 1 of device

5 4

W1s

EHA07177

Position in tape: pin 1

opposite of feed hole side

Direction of Unreeling

SC74_Tape

Type

SMBTA06UPN

Marking

Pin Configuration

Package

s2P

1=E 2=B 3=C 4=E 5=B 6=C SC74

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

500

Peak collector current

Base current

100

200

330

Peak base current

Total power dissipation-

°C

tot

T ≤ 115 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

2007-04-27

12 3 4 5 6 7

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