Datasheet > SMBTA06 / MMBTA06

SMBTA06 / MMBTA06

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	529K
描述
NPN Silicon AF Transistor

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中文翻译

获取价格

数据手册

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SMBTA06 / MMBTA06 数据手册

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SMBTA06/MMBTA06

NPN Silicon AF Transistor

• Low collector-emitter saturation voltage

• Complementary type:

SMBTA 56 / MMBTA56 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

s1G

Pin Configuration

Package

SOT23

SMBTA06/MMBTA06

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

500

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

Peak collector current, t ≤ 10 ms

100

200

330

Base current

Peak base current

Total power dissipation-

°C

tot

T ≤ 79 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 215

Unit

K/W

thJS

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2011-12-19

12 3 4 5 6 7

中文翻译

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