Datasheet > SiHF18N50D

SiHF18N50D

更新时间： 2024-09-17 14:54:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	173K
描述
D Series Power MOSFET

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SiHF18N50D 数据手册

SiHF18N50D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

• Optimal design

TO-220 FULLPAK

- Low area specific on-resistance

- Low input capacitance (C_iss

)

Available

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R_onx Q_g

- Fast switching

N-Channel MOSFET

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

550

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



R_DS(on)max. () at 25 °C

V_GS= 10 V

0.28



Q_gmax. (nC)

_gs(nC)

_gd(nC)

APPLICATIONS

Configuration

Single

• Consumer electronics

- Displays (LCD or Plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF18N50D-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

Gate-source voltage AC (f > 1 Hz)

V_DS

500

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.3

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

E_AS

P_D

115

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Reverse diode dV/dt ^d

0.4

Soldering recommendations (peak temperature) ^c

For 10 s

300

°C

Mounting torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 10 A

c. 1.6 mm from case

d. I_SD I_D, starting T_J= 25 °C

e. Limited by maximum junction temperature

S18-0055-Rev. C, 22-Jan-18

Document Number: 91507

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF18N50D相关器件

型号	品牌	获取价格	描述	数据表
SIHF18N50D-E3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SIHF22N60E	VISHAY	获取价格	E Series Power MOSFET
SIHF22N60E-E3	VISHAY	获取价格	E Series Power MOSFET
SIHF22N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
SIHF22N60S-E3	VISHAY	获取价格	TRANSISTOR 22 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT,
SiHF22N65E	VISHAY	获取价格	E Series Power MOSFET
SIHF22N65E-E3	VISHAY	获取价格	Power Field-Effect Transistor
SIHF22N65E-GE3	VISHAY	获取价格	Power Field-Effect Transistor
SiHF23N60E	VISHAY	获取价格	E Series Power MOSFET
SiHF28N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode

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