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SiHF23N60E PDF预览

SiHF23N60E

更新时间: 2024-09-17 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 178K
描述
E Series Power MOSFET

SiHF23N60E 数据手册

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SiHF23N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
TO-220 FULLPAK  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
)
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
G
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
D
G
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) max. () at 25 °C  
VGS = 10 V  
0.158  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Qg max. (nC)  
95  
16  
Qgs (nC)  
gd (nC)  
Q
25  
- Welding  
Configuration  
Single  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
SiHF23N60E-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
30  
T
C = 25 °C  
23  
15  
Continuous Drain Current (TJ = 150 °C) e  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Current a  
IDM  
63  
Linear Derating Factor  
0.28  
353  
W/°C  
mJ  
W
Single Pulse Avalanche Energy b  
Maximum Power Dissipation  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt d  
EAS  
PD  
35  
TJ, Tstg  
-55 to +150  
37  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
34  
Soldering Recommendations (Peak temperature) c  
For 10 s  
300  
°C  
Mounting Torque  
M3 screw  
0.6  
Nm  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
e. Limited by maximum junction temperature.  
S16-1602-Rev. D, 15-Aug-16  
Document Number: 91553  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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