Datasheet > SiHF28N60EF

SiHF28N60EF

更新时间： 2024-11-24 14:53:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	169K
描述
EF Series Power MOSFET with Fast Body Diode

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SiHF28N60EF 数据手册

SiHF28N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET with Fast Body Diode

FEATURES

TO-220 FULLPAK

• Fast body diode MOSFET using E series

technology

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM): R_onx Q_g

• Low input capacitance (C_iss

)

• Low switching losses due to reduced Q_rr

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High intensity discharge (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)max. () at 25 °C

V_GS= 10 V

0.123

Q_gmax. (nC)

120

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power suppliers (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF28N60EF-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.31

691

W/°C

Single Pulse Avalanche Energy ^b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Soldering Recommendations (Peak temperature) ^c

For 10 s

300

°C

Mounting Torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 900 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

S17-0294-Rev. C, 27-Feb-17

Document Number: 91604

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF28N60EF相关器件

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SIHF30N60E	VISHAY	获取价格	E Series Power MOSFET
SIHF30N60E_13	VISHAY	获取价格	E Series Power MOSFET
SIHF30N60E-E3	VISHAY	获取价格	E Series Power MOSFET
SIHF30N60E-GE3	VISHAY	获取价格	E Series Power MOSFET
SiHF35N60E	VISHAY	获取价格	E Series Power MOSFET
SiHF35N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHF510	VISHAY	获取价格	Power MOSFET
SIHF510-E3	VISHAY	获取价格	Power MOSFET
SIHF510S	VISHAY	获取价格	Power MOSFET
SIHF510S-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN

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