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SIHF530STR PDF预览

SIHF530STR

更新时间: 2024-11-21 13:13:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 608K
描述
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power

SIHF530STR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.08其他特性:AVALANCHE RATED
雪崩能效等级(Eas):69 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.16 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):88 W最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHF530STR 数据手册

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IRF530, SiHF530  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.16  
RoHS*  
Qg (Max.) (nC)  
26  
5.5  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
11  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRF530PbF  
SiHF530-E3  
IRF530  
Lead (Pb)-free  
SnPb  
SiHF530  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
14  
Continuous Drain Current  
V
GS at 10 V  
ID  
10  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
0.59  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
69  
14  
EAR  
8.8  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
PD  
88  
5.5  
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 528 µH, RG = 25 Ω, IAS = 14 A (see fig. 12).  
c. ISD 14 A, dI/dt 140 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91019  
S-81240-Rev. A, 16-Jun-08  
www.vishay.com  
1

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