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SIHF540-E3 PDF预览

SIHF540-E3

更新时间: 2024-11-21 06:11:39
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1904K
描述
Power MOSFET

SIHF540-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):230 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.077 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHF540-E3 数据手册

 浏览型号SIHF540-E3的Datasheet PDF文件第2页浏览型号SIHF540-E3的Datasheet PDF文件第3页浏览型号SIHF540-E3的Datasheet PDF文件第4页浏览型号SIHF540-E3的Datasheet PDF文件第5页浏览型号SIHF540-E3的Datasheet PDF文件第6页浏览型号SIHF540-E3的Datasheet PDF文件第7页 
IRF540, SiHF540  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.077  
RoHS*  
Qg (Max.) (nC)  
72  
11  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
32  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRF540PbF  
SiHF540-E3  
IRF540  
Lead (Pb)-free  
SnPb  
SiHF540  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
28  
20  
Continuous Drain Current  
V
GS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
110  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
230  
28  
EAR  
15  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
150  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 440 µH, RG = 25 Ω, IAS = 28 A (see fig. 12).  
c. ISD 28 A, dI/dt 170 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91021  
S-81240-Rev. A, 16-Jun-08  
www.vishay.com  
1

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