Datasheet > SIHF30N60E-GE3

SIHF30N60E-GE3

更新时间： 2024-01-08 18:13:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	163K
描述
E Series Power MOSFET

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SIHF30N60E-GE3 数据手册

SiHF30N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

650

• Low Input Capacitance (C_iss

)

V_GS= 10 V

0.125

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

130

_gs(nC)

_gd(nC)

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Configuration

Single

TO-220 FULLPAK

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

N-Channel MOSFET

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

• Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF30N60E-GE3

SiHF30N60E-E3

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)^d

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.29

W/°C

E_AS

P_D

690

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^e

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature)^c

for 10 s

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. Limited by maximum junction temperature.

e. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S13-0059-Rev. F, 21-Jan-13

Document Number: 91454

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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SIHF30N60E-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SIHF30N60E-E3	VISHAY	完全替代	E Series Power MOSFET
IPA60R125C6XKSA1	INFINEON	功能相似	Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IPA60R125C6	INFINEON	功能相似	Metal Oxide Semiconductor Field Effect Transistor

与SIHF30N60E-GE3相关器件

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SIHF510STL	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR-E3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF510STRL-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN

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