Datasheet > SiHF35N60E

SiHF35N60E

更新时间： 2024-09-14 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	177K
描述
E Series Power MOSFET

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SiHF35N60E 数据手册

SiHF35N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• A specific on resistance (m-cm²) reduction of

25 %

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_DS(V) at T_Jmax.

_DS(on)typ. () at 25 °C

Q_gmax. (nC)

650

V_GS= 10 V

0.082

)

132

_gs(nC)

_gd(nC)

Configuration

Single

APPLICATIONS

TO-220 FULLPAK

• Power factor correction power supplies (PFC)

• Hard switching PWM stages

• Computing

- Switch mode power supplies (SMPS)

• Lighting

- Light emitting diode (LED)

- High intensity discharge (HID)

• Telecom

- Server power supplies

• Renewable energy

- Photovoltaic inverters

• Industrial

N-Channel MOSFET

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Uniterruptable power supplies

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF35N60E-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.31

691

W/°C

Single Pulse Avalanche Energy ^b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Soldering Recommendations (Peak temperature) ^c

For 10 s

300

°C

Mounting Torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

e. Limited by maximum junction temperature.

S16-1602-Rev. B, 15-Aug-16

Document Number: 91582

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF35N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHF35N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHF510	VISHAY	获取价格	Power MOSFET
SIHF510-E3	VISHAY	获取价格	Power MOSFET
SIHF510S	VISHAY	获取价格	Power MOSFET
SIHF510S-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN
SIHF510STL	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR-E3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF510STRL-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN
SIHF520	VISHAY	获取价格	Power MOSFET

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