SIHF510S

更新时间： 2024-09-13 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	176K
描述
Power MOSFET

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SIHF510S 数据手册

IRF510S, SiHF510S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

100

R_DS(on)()

V_GS= 10 V

0.54

Q_g(Max.) (nC)

8.3

2.3

_gs(nC)

_gd(nC)

3.8

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHF510S-GE3

IRF510SPbF

D²PAK (TO-263)

SiHF510STRL-GE3^a

IRF510STRLPbF^a

SiHF510STL-E3^a

D²PAK (TO-263)

SiHF510STRR-GE3^a

IRF510STRRPbF^a

SiHF510STR-E3^a

Lead (Pb)-free

SiHF510S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

100

UNIT

V_GS

_C= 25 °C

5.6

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

4.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.29

0.025

100

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

5.6

Repetitive Avalanche Energy^a

E_AR

4.3

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

T_A= 25 °C

P_D

V/ns

°C

3.7

dV/dt

5.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 4.8 mH, R_g= 25 , I_AS= 5.6 A (see fig. 12).

c. I_SD 5.6 A, dI/dt  75 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91016

S11-1044-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIHF510S相关器件

型号	品牌	获取价格	描述	数据表
SIHF510S-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN
SIHF510STL	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR-E3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF510STRL-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN
SIHF520	VISHAY	获取价格	Power MOSFET
SIHF520-E3	VISHAY	获取价格	Power MOSFET
SIHF520S	VISHAY	获取价格	TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF520S-E3	VISHAY	获取价格	TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF520S-GE3	VISHAY	获取价格	TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN

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