Datasheet > SIHF520STRL-GE3

SIHF520STRL-GE3

更新时间： 2024-11-01 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	184K
描述
Power Field-Effect Transistor,

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SIHF520STRL-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	6 weeks
风险等级：	5.65	Is Samacsys：	N
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIHF520STRL-GE3 数据手册

IRF520S, SiHF520S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

PRODUCT SUMMARY

V_DS(V)

_DS(on)()

Q_g(Max.) (nC)

100

V_GS= 10 V

0.27

• Surface Mount

Available

4.4

7.7

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

Available

Configuration

Single

• Ease of Paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

D²PAK (TO-263)

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

N-Channel MOSFET

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF520S-GE3

SiHF520STRR-GE3

SiHF520STRL-GE3

IRF520SPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

_C= 25 °C

9.2

6.5

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

0.025

200

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Currenta

E_AS

I_AR

9.2

Repetitive Avalanche Energy^a

E_AR

6.0

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

_C= 25 °C

3.7

5.5

P_D

V/ns

°C

T_A= 25 °C

dV/dt

T_J, T_stg

- 55 to + 175

300^d

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 3.5 mH, R_g= 25 , I_AS= 9.2 A (see fig. 12).

c. I_SD 9.2 A, dI/dt  110 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-1000-Rev. D, 23-May-16

Document Number: 91018

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIHF520STRL-GE3相关器件

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SIHF530	VISHAY	获取价格	Power MOSFET
SIHF530-E3	VISHAY	获取价格	Power MOSFET
SIHF530S	VISHAY	获取价格	Power MOSFET
SIHF530S-E3	VISHAY	获取价格	Power MOSFET
SIHF530S-GE3	VISHAY	获取价格	Power MOSFET
SIHF530STL	VISHAY	获取价格	暂无描述
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SIHF530STR	VISHAY	获取价格	TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF530STR-E3	VISHAY	获取价格	Power MOSFET
SIHF530STRL-GE3	VISHAY	获取价格	Power MOSFET

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