Datasheet > SIHF30N60E-E3

SIHF30N60E-E3

更新时间： 2024-11-23 09:25:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	183K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHF30N60E-E3 数据手册

SiHF30N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

650

• Low Input Capacitance (C_iss

)

RoHS

V_GS= 10 V

0.125

COMPLIANT

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

130

_gs(nC)

_gd(nC)

• Avalanche Energy Rated (UIS)

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

APPLICATIONS

TO-220 FULLPAK

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

N-Channel MOSFET

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

• Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF30N60E-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

600

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 150 °C)^d

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Avalanche Energy (repetitive)

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AR

E_AS

0.25

690

P_D

- 55 to + 150

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^e

T_J, T_stg

°C

T_J= 125 °C

dV/dt

V/ns

°C

300^c

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. Limited by maximum junction temperature.

e. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S11-2091 Rev. C, 31-Oct-11

Document Number: 91454

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHF30N60E-E3相关器件

型号	品牌	获取价格	描述	数据表
SIHF30N60E-GE3	VISHAY	获取价格	E Series Power MOSFET
SiHF35N60E	VISHAY	获取价格	E Series Power MOSFET
SiHF35N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHF510	VISHAY	获取价格	Power MOSFET
SIHF510-E3	VISHAY	获取价格	Power MOSFET
SIHF510S	VISHAY	获取价格	Power MOSFET
SIHF510S-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AN
SIHF510STL	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
SIHF510STR-E3	VISHAY	获取价格	TRANSISTOR 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,

与SIHF30N60E-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF30N60E-E3

SIHF30N60E-E3 数据手册

与SIHF30N60E-E3相关器件

与SIHF30N60E-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF30N60E-E3

SIHF30N60E-E3 数据手册

与SIHF30N60E-E3相关器件

与SIHF30N60E-E3相关文章

您还可以找

您在本页遇到什么问题？