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SiHF22N65E PDF预览

SiHF22N65E

更新时间: 2024-11-27 14:55:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 170K
描述
E Series Power MOSFET

SiHF22N65E 数据手册

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SiHF22N65E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
Note  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
DS(on) max. at 25 °C (Ω)  
Qg max. (nC)  
700  
)
R
VGS = 10 V  
0.18  
Available  
Available  
110  
15  
Q
gs (nC)  
gd (nC)  
Q
32  
Configuration  
Single  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
D
TO-220 FULLPAK  
APPLICATIONS  
G
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
S
N-Channel MOSFET  
S
D
G
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFROMATION  
Package  
TO-220 FULLPAK  
SiHF22N65E-E3  
SiHF22N65E-GE3  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
650  
V
VGS  
30  
T
C = 25 °C  
22  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
14  
A
Pulsed Drain Current a  
IDM  
56  
Linear Derating Factor  
Single Pulse Avalanche Energy b  
1.8  
W/°C  
mJ  
W
EAS  
PD  
691  
Maximum Power Dissipation  
35  
-55 to +150  
70  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt d  
TJ, Tstg  
°C  
TJ = 125 °C  
for 10 s  
dV/dt  
V/ns  
°C  
26  
Soldering Recommendations (Peak Temperature) c  
300  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S15-0291-Rev. B, 23-Feb-15  
Document Number: 91537  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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