Datasheet > SiHF22N65E

SiHF22N65E

更新时间： 2024-11-07 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	170K
描述
E Series Power MOSFET

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SiHF22N65E 数据手册

SiHF22N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C (Ω)

Q_gmax. (nC)

700

)

V_GS= 10 V

0.18

Available

110

_gs(nC)

_gd(nC)

Configuration

Single

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.

TO-220 FULLPAK

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

N-Channel MOSFET

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFROMATION

Package

TO-220 FULLPAK

SiHF22N65E-E3

SiHF22N65E-GE3

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

650

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.8

W/°C

E_AS

P_D

691

Maximum Power Dissipation

-55 to +150

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 7 A.

c. 1.6 mm from case.

d. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S15-0291-Rev. B, 23-Feb-15

Document Number: 91537

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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