是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.29 | 雪崩能效等级(Eas): | 367 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 21 A |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.18 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 227 W | 最大脉冲漏极电流 (IDM): | 56 A |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SIHF22N60E-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SIHF22N60S-E3 | VISHAY |
获取价格 |
TRANSISTOR 22 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, | |
SiHF22N65E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SIHF22N65E-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor | |
SIHF22N65E-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor | |
SiHF23N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHF28N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET with Fast Body Diode | |
SIHF30N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SIHF30N60E_13 | VISHAY |
获取价格 |
E Series Power MOSFET | |
SIHF30N60E-E3 | VISHAY |
获取价格 |
E Series Power MOSFET |