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SIHF22N60E-E3 PDF预览

SIHF22N60E-E3

更新时间: 2024-11-23 12:20:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 170K
描述
E Series Power MOSFET

SIHF22N60E-E3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.29雪崩能效等级(Eas):367 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):21 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):227 W最大脉冲漏极电流 (IDM):56 A
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHF22N60E-E3 数据手册

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SiHF22N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
• Low Figure-of-Merit (FOM) Ron x Qg  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
DS(on) max. at 25 °C ()  
Qg max. (nC)  
650  
• Low Input Capacitance (Ciss  
)
R
VGS = 10 V  
0.18  
• Reduced Switching and Conduction Losses  
• Ultra Low Gate Charge (Qg)  
86  
14  
Q
gs (nC)  
gd (nC)  
• Avalanche Energy Rated (UIS)  
Q
26  
• Compliant to RoHS Directive 2002/95/EC  
Note  
Configuration  
Single  
* Pb containing terminations are not RoHS compliant, exemptions  
may apply  
D
TO-220 FULLPAK  
APPLICATIONS  
• Server and Telecom Power Supplies  
• Switch Mode Power Supplies (SMPS)  
• Power Factor Correction Power Supplies (PFC)  
• Lighting  
G
S
N-Channel MOSFET  
- High-Intensity Discharge (HID)  
- Fluorescent Ballast Lighting  
• Industrial  
S
D
G
- Welding  
- Induction Heating  
- Motor Drives  
- Battery Chargers  
- Renewable Energy  
- Solar (PV Inverters)  
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
SiHF22N60E-E3  
Lead (Pb)-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
600  
V
Gate-Source Voltage  
20  
VGS  
Gate-Source Voltage AC (f > 1 Hz)  
30  
T
C = 25 °C  
21  
Continuous Drain Current (TJ = 150 °C)e  
VGS at 10 V  
ID  
TC = 100 °C  
13  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
1.8  
367  
W/°C  
mJ  
W
EAS  
PD  
Maximum Power Dissipation  
227  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dtd  
TJ, Tstg  
- 55 to + 150  
37  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
°C  
11  
300c  
Soldering Recommendations (Peak Temperature)  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
e. Limited by maximum junction temperature.  
S11-2087 Rev. B, 31-Oct-11  
Document Number: 91471  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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