SIHF16N50C-E3

更新时间： 2024-09-16 09:25:35

品牌	Logo	应用领域
威世 - VISHAY		栅极
页数	文件大小	规格书
8页	155K
描述
Gate Charge Improved Compliant to RoHS Directive 2002/95/EC

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数据手册
替代型号

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SIHF16N50C-E3 数据手册

SiHP16N50C, SiHB16N50C, SiHF16N50C

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

• Low Figure-of-Merit R_onx Q_g

560 V

_DS(on)(Ω)

V_GS= 10 V

0.38

• 100 % Avalanche Tested

• Gate Charge Improved

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

17.6

21.8

• T_rr/Q_rrImproved

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

TO-220 FULLPAK

D²PAK (TO-263)

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

D²PAK (TO-263)

SiHB16N50C-E3

TO-220 FULLPAK

SiHF16N50C-E3

Lead (Pb)-free

SiHP16N50C-E3

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

LIMIT

TO220-AB

SYMBOL D²PAK (TO-263)

TO-220

FULLPAK

PARAMETER

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

500

T_C= 25 °C

T_C=100°C

Continuous Drain Current (T_J= 150 °C)^a

V_GSat 10 V

I_D

Pulsed Drain Current^c

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AS

P_D

320

250

- 55 to + 150

300

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

T_J, T_stg

°C

for 10 s

Notes

a. Limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.5 mH, R_g= 25 Ω, I_AS= 16 A.

c. Repetitive rating; pulse width limited by maximum junction temperature.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91401

S10-0811-Rev. A, 12-Apr-10

www.vishay.com

12 3 4 5 6 7 8

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SIHF16N50C-E3 替代型号

型号	品牌	替代类型	描述	数据表
FDPF16N50	FAIRCHILD	功能相似	500V N-Channel MOSFET

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