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SIGC185T170R2C PDF预览

SIGC185T170R2C

更新时间: 2024-11-25 03:32:03
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
4页 71K
描述
IGBT Chip in NPT-technology

SIGC185T170R2C 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIE
包装说明:13.56 X 13.56 MM, DIE-10针数:10
Reach Compliance Code:compliant风险等级:5.73
最大集电极电流 (IC):100 A集电极-发射极最大电压:1700 V
配置:SINGLE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:S-XUUC-N10
元件数量:1端子数量:10
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):830 ns标称接通时间 (ton):200 ns
Base Number Matches:1

SIGC185T170R2C 数据手册

 浏览型号SIGC185T170R2C的Datasheet PDF文件第2页浏览型号SIGC185T170R2C的Datasheet PDF文件第3页浏览型号SIGC185T170R2C的Datasheet PDF文件第4页 
SIGC185T170R2C  
IGBT Chip in NPT-technology  
C
FEATURES:  
·
·
·
·
·
1700V NPT technology  
280µm chip  
short circuit prove  
positive temperature coefficient  
easy paralleling  
This chip is used for:  
·
IGBT-Module BSM100GB170DL  
Applications:  
G
E
·
drives  
Chip Type  
VCE  
ICn  
Die Size  
Package  
Ordering Code  
Q67041-A4697-  
A001  
1700V 100A 13.56 x 13.56 mm2 sawn on foil  
SIGC185T170R2C  
MECHANICAL PARAMETER:  
mm2  
Raster size  
13.56 x 13.56  
183.87 / 141.6  
8 x ( 2.38x3.98 )  
0.757 x 1.48  
280  
Area total / active  
Emitter pad size  
Gate pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
90  
Max.possible chips per wafer  
Passivation frontside  
Emitter metalization  
72 pcs  
Photoimide  
3200 nm Al Si 1%  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Collector metalization  
Die bond  
Electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003  

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