5秒后页面跳转
SIGC25T120CX1SA4 PDF预览

SIGC25T120CX1SA4

更新时间: 2024-10-26 19:54:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
5页 61K
描述
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, DIE-3

SIGC25T120CX1SA4 技术参数

生命周期:Active包装说明:UNCASED CHIP, R-XUUC-N3
Reach Compliance Code:compliant风险等级:5.59
最大集电极电流 (IC):32 A集电极-发射极最大电压:1200 V
配置:SINGLEJESD-30 代码:R-XUUC-N3
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER晶体管元件材料:SILICON
标称断开时间 (toff):470 ns标称接通时间 (ton):100 ns
Base Number Matches:1

SIGC25T120CX1SA4 数据手册

 浏览型号SIGC25T120CX1SA4的Datasheet PDF文件第2页浏览型号SIGC25T120CX1SA4的Datasheet PDF文件第3页浏览型号SIGC25T120CX1SA4的Datasheet PDF文件第4页浏览型号SIGC25T120CX1SA4的Datasheet PDF文件第5页 
SIGC25T120C  
IGBT Chip in NPT-technology  
Features:  
This chip is used for:  
C
1200V NPT technology  
positive temperature coefficient  
easy paralleling  
power module  
BUP 213  
Applications:  
drives  
G
E
Chip Type  
VCE  
IC  
Die Size  
Package  
SIGC25T120C  
1200V 15A  
4.53 x 5.71 mm2  
sawn on foil  
Mechanical Parameter  
Raster size  
4.53 x 5.71  
Emitter pad size  
Gate pad size  
Area total  
2 x ( 2.18 x 1.6 )  
mm2  
1.09 x 0.68  
25.9  
Thickness  
200  
µm  
Wafer size  
150  
mm  
Max.possible chips per wafer  
Passivation frontside  
Pad metal  
555  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Backside metal  
Die bond  
Electrically conductive glue or solder  
Wire bond  
Al, <500µm  
Reject ink dot size  
0.65mm ; max 1.2mm  
Store in original container, in dry nitrogen, in dark  
environment, < 6 month at an ambient temperature of 23°C  
Recommended storage environment  
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7141MM, Edition 2.1, 14.10.2008  

与SIGC25T120CX1SA4相关器件

型号 品牌 获取价格 描述 数据表
SIGC25T60NC INFINEON

获取价格

IGBT Chip in NPT-technology
SIGC25T60SN INFINEON

获取价格

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, DIE-3
SIGC25T60SNC INFINEON

获取价格

IGBT Chip in NPT-technology 600V NPT technolo
SIGC25T60UN INFINEON

获取价格

HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
SIGC28T60 INFINEON

获取价格

IGBT3 Chip
SIGC28T60E INFINEON

获取价格

TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术,为行业树
SIGC28T60S INFINEON

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE
SIGC28T60SE INFINEON

获取价格

Insulated Gate Bipolar Transistor,
SIGC28T60SX1SA2 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE
SIGC28T60X1SA4 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE