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SIGC40T65R3E PDF预览

SIGC40T65R3E

更新时间: 2024-10-26 20:08:43
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
5页 115K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel

SIGC40T65R3E 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.76最大集电极电流 (IC):75 A
集电极-发射极最大电压:650 V门极发射器阈值电压最大值:6.4 V
门极-发射极最大电压:20 V最高工作温度:175 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
子类别:Insulated Gate BIP Transistors处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SIGC40T65R3E 数据手册

 浏览型号SIGC40T65R3E的Datasheet PDF文件第2页浏览型号SIGC40T65R3E的Datasheet PDF文件第3页浏览型号SIGC40T65R3E的Datasheet PDF文件第4页浏览型号SIGC40T65R3E的Datasheet PDF文件第5页 
SIGC40T65R3E  
IGBT3 Chip  
Features:  
Recommended for:  
power modules  
650V Trench & Field Stop technology  
C
low VCE(sat)  
low turn-off losses  
Applications:  
short tail current  
drives  
positive temperature coefficient  
easy paralleling  
G
E
Qualified according to JEDEC for target  
applications  
1 )  
Chip Type  
VCE  
650V  
ICn  
Die Size  
Package  
SIGC40T65R3E  
75A  
5.74 x 6.96 mm2  
sawn on foil  
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization  
Mechanical Parameters  
Die size  
5.74 x 6.96  
See chip drawing  
1.615 x 0.817  
39.95  
Emitter pad size (incl. gate pad)  
Gate pad size  
mm2  
Area total  
Thickness  
70  
µm  
Wafer size  
200  
mm  
Max.possible chips per wafer  
Passivation frontside  
Pad metal  
666  
Photoimide  
3200 nm AlSiCu  
Backside metal  
Die bond  
Ni Ag –system  
Electrically conductive epoxy glue and soft solder  
Wire bond  
Al, <500µm  
Reject ink dot size  
0.65mm ; max 1.2mm  
for original and  
Ambient atmosphere air, Temperature 17°C – 25°C,  
< 6 month  
sealed MBB bags  
Storage environment  
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,  
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month  
for open MBB bags  
Edited by INFINEON Technologies, IFAG IMM PSD D, L7821M, Edition 1.0, 25.06.2011  

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