Datasheet > SIGC40T65R3E

SIGC40T65R3E

更新时间： 2024-10-26 20:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	115K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel

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技术参数
数据手册

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SIGC40T65R3E 技术参数

是否无铅：	不含铅	是否Rohs认证：	不符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	最大集电极电流 (IC)：	75 A
集电极-发射极最大电压：	650 V	门极发射器阈值电压最大值：	6.4 V
门极-发射极最大电压：	20 V	最高工作温度：	175 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
子类别：	Insulated Gate BIP Transistors	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIGC40T65R3E 数据手册

SIGC40T65R3E

IGBT3 Chip

Features:

Recommended for:

power modules

•

650V Trench & Field Stop technology

•

low V_CE(sat)

low turn-off losses

Applications:

short tail current

•

drives

positive temperature coefficient

easy paralleling

Qualified according to JEDEC for target

applications

1 )

Chip Type

V_CE

650V

I_Cn

Die Size

Package

SIGC40T65R3E

75A

5.74 x 6.96 mm²

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

5.74 x 6.96

See chip drawing

1.615 x 0.817

39.95

Emitter pad size (incl. gate pad)

Gate pad size

mm²

Area total

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

666

Photoimide

3200 nm AlSiCu

Backside metal

Die bond

Ni Ag –system

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

for original and

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

sealed MBB bags

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IMM PSD D, L7821M, Edition 1.0, 25.06.2011

12 3 4 5

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