型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SIGC25T60UN | INFINEON |
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HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY | |
SIGC28T60 | INFINEON |
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IGBT3 Chip | |
SIGC28T60E | INFINEON |
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TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术,为行业树 | |
SIGC28T60S | INFINEON |
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE | |
SIGC28T60SE | INFINEON |
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Insulated Gate Bipolar Transistor, | |
SIGC28T60SX1SA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE | |
SIGC28T60X1SA4 | INFINEON |
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE | |
SIGC28T65E | INFINEON |
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Insulated Gate Bipolar Transistor | |
SIGC32T120R3 | INFINEON |
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IGBT3 Chip | |
SIGC32T120R3E | INFINEON |
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Insulated Gate Bipolar Transistor |