Datasheet > 晶体管 > IGBT> SIGC25T60SNC

SIGC25T60SNC

更新时间： 2024-10-26 06:11:39

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	79K
描述
IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove

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SIGC25T60SNC 数据手册

SIGC25T60SNC

IGBT Chip in NPT-technology

FEATURES:

This chip is used for:

SGP30N60

600V NPT technology

100µm chip

short circuit prove

positive temperature coefficient

easy paralleling

Applications:

drives

Chip Type

V_CE

I_Cn

30A

Die Size

4.5 x 5.71 mm²

Package

Ordering Code

Q67041-A4667-

A001

Q67041-A4667-

A002

SIGC25T60SNC

600V

sawn on foil

SIGC25T60SNC

600V

unsawn

MECHANICAL PARAMETER:

mm²

Raster size

4.5 x 5.71

25.7 / 21.4

2x( 2.18x1.58 )

0.68 x 1.08

100

Area total / active

Emitter pad size

Gate pad size

Thickness

µm

deg

Wafer size

150

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metallization

566

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003

12 3 4

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