Datasheet > SIGC39T65E

SIGC39T65E

更新时间： 2024-10-26 19:49:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	119K
描述
Insulated Gate Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SIGC39T65E 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIGC39T65E 数据手册

SIGC39T65E

IGBT3 Chip

Features:

Recommended for:

power modules

•

650V Trench & Field Stop technology

•

low V_CE(sat)

low turn-off losses

Applications:

short tail current

•

drives

positive temperature coefficient

easy paralleling

Qualified according to JEDEC for target

applications

1 )

Chip Type

V_CE

650V

I_Cn

Die Size

Package

SIGC39T65E

75A

6.59 x 5.91 mm²

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

6.59 x 5.91

See chip drawing

1.52 x 0.817

38.9

Emitter pad size (incl. gate pad)

Gate pad size

mm²

Area total

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

686

Photoimide

3200 nm AlSiCu

Backside metal

Die bond

Ni Ag –system

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

for original and

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

sealed MBB bags

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IMM PSD D, L7571M, Edition 1.0, 25.06.2011

12 3 4 5

中文翻译

下载PDF

与SIGC39T65E相关器件

型号	品牌	获取价格	描述	数据表
SIGC40T60R3	INFINEON	获取价格	IGBT3 Chip
SIGC40T60R3E	INFINEON	获取价格	TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术，为行业树
SIGC40T65R3E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel
SIGC41T120R3	INFINEON	获取价格	IGBT3 Chip
SIGC41T120R3E	INFINEON	获取价格	Insulated Gate Bipolar Transistor
SIGC41T120R3L	INFINEON	获取价格	IGBT3 Chip
SIGC41T120R3LE	INFINEON	获取价格	Insulated Gate Bipolar Transistor
SIGC42T120C	INFINEON	获取价格	IGBT Chip in NPT-technology
SIGC42T120CL	INFINEON	获取价格	IGBT Chip in NPT-technology
SIGC42T120CLUNSAWNX6SA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,