SIGC32T120R3LE

更新时间： 2024-11-25 13:13:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅
页数	文件大小	规格书
4页	77K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIGC32T120R3LE 数据手册

SIGC32T120R3

IGBT³Chip

FEATURES:

1200V Trench + Field Stop technology

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

This chip is used for:

· power module

Applications:

drives

Chip Type

V_CE

I_Cn

Die Size

6.5 x 4.87 mm²

Package

Ordering Code

Q67050-

A4104-A001

SIGC32T120R3

1200V 25A

sawn on foil

MECHANICAL PARAMETER:

Raster size

6.5 x 4.87

3.4 x 4.992

1.139 x 1.139

31.6 / 21.5

140

Emitter pad size

Gate pad size

Area total / active

Thickness

mm²

µm

Wafer size

150

grd

Flat position

180

Max.possible chips per wafer

Passivation frontside

Emitter metallization

454 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L7641A, Edition 2, 04.09.2003

12 3 4

中文翻译

下载PDF

与SIGC32T120R3LE相关器件

型号	品牌	获取价格	描述	数据表
SIGC39T60	INFINEON	获取价格	IGBT3 Chip
SIGC39T60E	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
SIGC39T60S	INFINEON	获取价格	IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient
SIGC39T60X1SA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, 6.59 X 5.91 MM, DIE
SIGC39T65E	INFINEON	获取价格	Insulated Gate Bipolar Transistor
SIGC40T60R3	INFINEON	获取价格	IGBT3 Chip
SIGC40T60R3E	INFINEON	获取价格	TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术，为行业树
SIGC40T65R3E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel
SIGC41T120R3	INFINEON	获取价格	IGBT3 Chip
SIGC41T120R3E	INFINEON	获取价格	Insulated Gate Bipolar Transistor