Datasheet > SIGC223T120R2CS

SIGC223T120R2CS

更新时间： 2024-11-25 03:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	69K
描述
IGBT Chip in NPT-technology

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SIGC223T120R2CS 数据手册

SIGC223T120R2CS

IGBT Chip in NPT-technology

FEATURES:

This chip is used for:

IGBT Modules

1200V NPT technology 175µm chip

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

integrated gate resistor

Applications:

drives, SMPS, resonant

applications

Chip Type

V_CE

I_Cn

Die Size

Package

Ordering Code

SIGC223T120R2CS 1200V 150A

14.4 x 15.5 mm²

sawn on foil

tbd

MECHANICAL PARAMETER:

mm²

Raster size

14.4 X 15.5

Emitter pad size

Gate pad size

8x( 3.67x6.77 )

1.49 x 1.51

223.5 / 189.9

180

Area total / active

Thickness

µm

grd

Wafer size

150

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metallization

54 pcs

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7121T, Edition 2, 03.09.2003

12 3 4

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