Datasheet > SIGC25T120CLUNSAWNX6SA1

SIGC25T120CLUNSAWNX6SA1

更新时间： 2024-11-21 15:51:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
4页	63K
描述
Insulated Gate Bipolar Transistor,

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技术参数
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SIGC25T120CLUNSAWNX6SA1 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.59	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIGC25T120CLUNSAWNX6SA1 数据手册

浏览型号SIGC25T120CLUNSAWNX6SA1的Datasheet PDF文件第2页

SIGC25T120CL

IGBT Chip in NPT-technology

FEATURES:

This chip is used for:

power module

BSM15GD120DLC E3224

1200V NPT technology 180µm chip

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

Applications:

drives

Chip Type

V_CE

I_Cn

Die Size

Package

Ordering Code

Q67041-

A4704-A003

SIGC25T120CL

1200V 15A

5.71 x 4.53 mm²

sawn on foil

MECHANICAL PARAMETER:

mm²

Raster size

5.71 x 4.53

Emitter pad size

Gate pad size

2 x ( 2.18 x 1.6 )

1.09 x 0.68

25.9 / 18.7

180

Area total / active

Thickness

µm

grd

Wafer size

150

Flat position

270

Max.possible chips per wafer

Passivation frontside

Emitter metallization

555 pcs

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7141-P, Edition 2, 03.09.2003

12 3 4

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