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SI9939DY-T1-E3 PDF预览

SI9939DY-T1-E3

更新时间: 2024-09-15 21:18:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
7页 121K
描述
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

SI9939DY-T1-E3 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):3.5 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

SI9939DY-T1-E3 数据手册

 浏览型号SI9939DY-T1-E3的Datasheet PDF文件第2页浏览型号SI9939DY-T1-E3的Datasheet PDF文件第3页浏览型号SI9939DY-T1-E3的Datasheet PDF文件第4页浏览型号SI9939DY-T1-E3的Datasheet PDF文件第5页浏览型号SI9939DY-T1-E3的Datasheet PDF文件第6页浏览型号SI9939DY-T1-E3的Datasheet PDF文件第7页 
Si9939DY  
Vishay Siliconix  
Complimentary 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.05 @ V = 10 V  
GS  
"3.5  
"3  
0.07 @ V = 6 V  
GS  
N-Channel  
P-Channel  
30  
0.08 @ V = 4.5 V  
"2.5  
"3.5  
"3  
GS  
0.10 @ V = –10 V  
GS  
0.12 @ V = –6V  
GS  
–30  
0.16 @ V = –4.5 V  
"2.5  
GS  
D
1
D
1
S
2
SO-8  
G
2
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
1
G
1
S
2
G
2
S
1
D
2
D
2
Top View  
N-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
N-Channel  
P-Channel  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
–30  
"20  
"3.5  
"2.8  
"20  
–1.7  
DS  
GS  
V
V
"20  
"3.5  
"2.8  
"20  
1.7  
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 70_C  
2.0  
1.3  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
N- or P- Channel  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70146  
S-00652—Rev. G, 27-Mar-00  
www.vishay.com S FaxBack 408-970-5600  
1

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