SI9945BDY

更新时间： 2024-11-06 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	270K
描述
Dual N-Channel 60-V (D-S) MOSFET

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SI9945BDY 数据手册

New Product

Si9945BDY

Vishay Siliconix

Dual N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

5.3

Definition

• TrenchFET^®Power MOSFET

0.058 at V_GS= 10 V

0.072 at V_GS= 4.5 V

13 nC

4.7

APPLICATIONS

•

LCD TV CCFL Inverter

•

Load Switch

SO-8

Top View

Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

5.3

4.3

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

4.3^{b, c}

3.4^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Width)

T_C= 25 °C

2.6

Continuous Source-Drain Diode Current

1.7^{b, c}

T_A= 25 °C

I_AS

Avalanche Current

L = 0 1 mH

T_C= 25 °C

E_AS

Single-Pulse Avalanche Energy

6.1

3.1

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

2^{b, c}

1.3^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, d}

Symbol

Typical

Maximum

62.5

Unit

R_thJA

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 64737

S09-0321-Rev. A, 02-Mar-09

www.vishay.com

12 3 4 5 6 7...10

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