Datasheet > SI9948AEY

SI9948AEY

更新时间： 2024-09-17 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	319K
描述
种类:P+P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-5.3A;Vgs(th)(V):±20

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SI9948AEY 数据手册

UMW

SI9948

Dual P-Channel MOSFET

PRODUCT SUMMARY

VDS (V)=-60V

RDS(ON)

59m (VGS = -10V)

69 m (VGS = -4.5V)

RDS(ON)

APPLICATIONS

P-Channel MOSFET

Load Switches

SOP-8

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 60

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

.3^e

.0^e

- 5.3^{a, b}

- 5.0^{a, b}

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 32^e

- 4.1

- 2.0^{a, b}

- 20

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

4.0

2.5

P_D

Maximum Power Dissipation

2.0^{a, b}

1.4^{a, b}

- 55 to 150

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

e. Limited by package.

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UTD Semiconductor Co.,Limited

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