Datasheet > SI9948AEY-T1-E3

SI9948AEY-T1-E3

更新时间： 2024-09-16 19:31:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	221K
描述
Power Field-Effect Transistor,

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技术参数
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SI9948AEY-T1-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.8
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI9948AEY-T1-E3 数据手册

Si9948AEY

Vishay Siliconix

Dual P-Channel 60-V (D-S), 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

TrenchFET^®Power MOSFETs

V_DS(V)

R_DS(on)(Ω)

I_D(A)

2.6

0.17 at V_GS= - 10 V

0.26 at V_GS= - 4.5 V

•

- 60

2.1

175 °C Maximum Junction Temperature

Compliant to RoHS Directive 2002/95/EC

SO-8

Top View

Ordering Information: Si9948AEY-T1-E3 (Lead (Pb)-free)

Si9948AEY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

2.6

Continuous Drain Current (T_J= 175 °C)^a

I_D

2.2

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

- 2

T_A= 25 °C

T_A= 70 °C

2.4

Maximum Power Dissipation^a

P_D

1.7

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

62.5

Junction-to-Ambient^a

R_thJA

°C/W

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm.

Document Number: 70759

S09-1389-Rev. C, 20-Jul-09

www.vishay.com

12 3 4 5 6 7 8

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