5秒后页面跳转
SI9945DY PDF预览

SI9945DY

更新时间: 2024-09-15 22:50:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管光电二极管
页数 文件大小 规格书
3页 240K
描述
Dual N-Channel Enhancement Mode MOSFET

SI9945DY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.72其他特性:FAST SWITCHING
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):3.3 A最大漏极电流 (ID):3.3 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):10 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI9945DY 数据手册

 浏览型号SI9945DY的Datasheet PDF文件第2页浏览型号SI9945DY的Datasheet PDF文件第3页 
June 1999  
Si9945DY*  
Dual N-Channel Enhancement Mode MOSFET  
General Description  
Features  
These N-Channel Enhancement Mode MOSFETs are  
produced using Fairchild Semiconductor's advance  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior switching  
performance.  
• 3.3 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V  
RDS(ON) = 0.200 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
• High power and current handling capability.  
Applications  
• Battery switch  
• Load switch  
• Motor controls  
'ꢃ  
'ꢃ  
'ꢀ  
'ꢀ  
*ꢃ  
6ꢃ  
*ꢀ  
62ꢁꢂ  
6ꢀ  
$EVROXWHꢀ0D[LPXPꢀ5DWLQJVꢀꢀ  
6\PERO  
3DUDPHWHU  
5DWLQJV  
8QLWV  
±
°
7KHUPDOꢀ&KDUDFWHULVWLFV  
θ
°
°
θ
3DFNDJHꢀ2XWOLQHVꢀDQGꢀ2UGHULQJꢀ,QIRUPDWLRQ  
'HYLFHꢀ0DUNLQJ  
'HYLFH  
5HHOꢀ6L]H  
7DSHꢀ:LGWK  
4XDQWLW\  
ꢀꢀꢀꢀꢁꢀ  
1999 Fairchild Semiconductor Corporation  
Si9945DY Rev. A  

SI9945DY 替代型号

型号 品牌 替代类型 描述 数据表
SI9945DY-T1 VISHAY

功能相似

Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal

与SI9945DY相关器件

型号 品牌 获取价格 描述 数据表
SI9945DY_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SI9945DYD84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SI9945DY-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI9945DYF011 FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SI9945DYL86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SI9945DY-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
SI9947DY TEMIC

获取价格

Dual P-Channel Enhancement-Mode MOSFET
SI9947DY-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
SI9948AEY VISHAY

获取价格

Dual P-Channel 60-V (D-S), 175C MOSFET
SI9948AEY UMW

获取价格

种类:P+P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25