是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.85 | Is Samacsys: | N |
最大漏极电流 (Abs) (ID): | 3.3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9945DY_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
SI9945DYD84Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
SI9945DY-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI9945DYF011 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
SI9945DYL86Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
SI9945DY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal | |
SI9947DY | TEMIC |
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Dual P-Channel Enhancement-Mode MOSFET | |
SI9947DY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
SI9948AEY | VISHAY |
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Dual P-Channel 60-V (D-S), 175C MOSFET | |
SI9948AEY | UMW |
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种类:P+P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25 |