Datasheet > SI9945BDY

SI9945BDY

更新时间： 2024-11-07 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	317K
描述
种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:5.3A;Vgs(th)(V):±20;漏源导通电阻:36mΩ@10V

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数据手册

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SI9945BDY 数据手册

UMW

SI9945

FEATURES

VDS (V) = 60V

I_D= 5.3A (V_GS=10V)

36m

47m

(VGS = 10V)

(VGS = 4.5V)

RDS(ON)

N-Channel MOSFET

APPLICATIONS

LCD TV CCFL inverter

Load switch

SOP-8

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

5.3

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

4.3

Continuous drain current (T_J= 150 °C)

I_D

4.3 ^{b, c}

3.4 ^{b, c}

Pulsed drain current (10 μs width)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

2.6

1.7 ^{b, c}

Continuous source-drain diode current

Avalanche current

I_AS

L = 0 1 mH

Single-pulse avalanche energy

E_AS

6.1

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.1

Maximum power dissipation

P_D

2 ^{b, c}

1.3 ^{b, c}

-55 to +150

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{a, d}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

62.5

°C/W

Maximum junction-to-foot (drain)

Steady state

R_thJF

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 110 °C/W

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