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SI7812DN-T1-E3 PDF预览

SI7812DN-T1-E3

更新时间: 2024-11-09 09:25:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 552K
描述
N-Channel 75-V (D-S) MOSFET

SI7812DN-T1-E3 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.54Is Samacsys:N
雪崩能效等级(Eas):11 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):7.2 A
最大漏源导通电阻:0.037 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):52 W最大脉冲漏极电流 (IDM):25 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7812DN-T1-E3 数据手册

 浏览型号SI7812DN-T1-E3的Datasheet PDF文件第2页浏览型号SI7812DN-T1-E3的Datasheet PDF文件第3页浏览型号SI7812DN-T1-E3的Datasheet PDF文件第4页浏览型号SI7812DN-T1-E3的Datasheet PDF文件第5页浏览型号SI7812DN-T1-E3的Datasheet PDF文件第6页浏览型号SI7812DN-T1-E3的Datasheet PDF文件第7页 
Si7812DN  
Vishay Siliconix  
N-Channel 75-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
Available  
16e  
16e  
0.037 at VGS = 10 V  
0.046 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
75  
8 nC  
Low Thermal Resistance PowerPAK®  
Package with Small Size and Low 1.07 mm  
Profile  
PowerPAK 1212-8  
APPLICATIONS  
Primary Side Switch  
S
3.30 mm  
3.30 mm  
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View  
Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
75  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
16e  
16e  
7.2a, b  
5.7a, b  
25  
T
C = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
16e  
3.2a, b  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
IAS  
Avalanche Current  
15  
L = 0.1 mH  
TC = 25 °C  
EAS  
Single-Pulse Avalanche Energy  
11  
mJ  
W
52  
T
C = 70 °C  
A = 25 °C  
33  
PD  
Maximum Power Dissipation  
3.8a, b  
T
2.4a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c, d  
°C  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
e. Package limited.  
Document Number: 73332  
S-83050-Rev. D, 29-Dec-08  
www.vishay.com  
1

SI7812DN-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI7812DN-T1-GE3 VISHAY

类似代替

N-Channel 75-V (D-S) MOSFET

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