Datasheet > SI7820DN

SI7820DN

更新时间： 2024-09-12 22:33:55

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威世 - VISHAY		/
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描述
N-Channel 200-V (D-S) MOSFET

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SI7820DN 数据手册

Si7820DN

Vishay Siliconix

New Product

N-Channel 200-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D PWM-Optimized TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% R_gTested

D Avalanche Tested

APPLICATIONS

0.240 @ V = 10 V

2.6

2.5

200

0.250 @ V = 6 V

D Primary Side Switch

− Telecom Power Supplies

− Distributed Power Architectures

− Miniature Power Modules

PowerPAK 1212-8

3.30 mm

Ordering Information: Si7820DN-T1—E3

N-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

200

"20

= 25_C

= 70_C

2.6

2.1

1.7

1.3

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

3.2

1.3

3.5

0.6

L = 0.1 mH

Single Avalanche Energy

= 25_C

= 70_C

3.8

2.0

1.5

0.8

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

1.9

2.4

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72581

S-32411—Rev. B, 24-Nov-03

www.vishay.com

12 3 4 5

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