Datasheet > Si7454FDP

Si7454FDP

更新时间： 2024-11-03 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	254K
描述
N-Channel 100 V (D-S) MOSFET

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Si7454FDP 数据手册

Si7454FDP

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8 Single

• TrenchFET^®Gen IV power MOSFET

• Very low R_DSx Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DSx Q_ossFOM

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• Primary side switch

PRODUCT SUMMARY

• DC/DC converters

V_DS(V)

100

0.0295

0.034

23.5

Single

• Power supplies

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

• Motor drive control

Q_gtyp. (nC)

_D(A)

Configuration

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

Si7454FDP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

23.5

18.8

7.2 ^{b, c}

5.7 ^{b, c}

35.5

3.3 ^{b, c}

11.25

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

3.6 ^{b, c}

2.3 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^b

t  10 s

Steady state

3.2

°C/W

Maximum junction-to-case (drain)

2.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

g. T_C= 25 °C

S20-0882-Rev. A, 16-Nov-2020

Document Number: 79350

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与Si7454FDP相关器件

型号	品牌	获取价格	描述	数据表
SI7455DP	VISHAY	获取价格	P-Channel 80-V (D-S) MOSFET
SI7455DP-T1-E3	VISHAY	获取价格	Trans MOSFET P-CH 80V 10.5A 8-Pin PowerPAK SO T/R
SI7455DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SI7456CDP	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7456CDP_17	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7456CDP-T1-GE3	VISHAY	获取价格	TRANSISTOR 10.3 A, 100 V, 0.0235 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS
SI7456DDP	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7456DDP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon,
SI7456DP	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7456DP_06	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET

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