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SI7456DDP

更新时间： 2024-02-11 06:31:28
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 482K
描述
N-Channel 100 V (D-S) MOSFET

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中文翻译

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SI7456DDP 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：SOT
包装说明：,针数：8
Reach Compliance Code：unknown风险等级：5.88
配置：Single最大漏极电流 (Abs) (ID)：5.7 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：5.2 W子类别：FET General Purpose Powers
表面贴装：YES

SI7456DDP 数据手册

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New Product  
Si7456DDP  
Vishay Siliconix  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
•
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
Material categorization:  
I
D (A)a  
27.8  
27.2  
24  
VDS (V)  
RDS(on) () Max.  
0.023 at VGS = 10 V  
0.024 at VGS = 7.5 V  
0.031 at VGS = 4.5 V  
Qg (Typ.)  
For definitions of compliance please see  
www.vishay.com/doc?99912  
100  
9.7 nC  
APPLICATIONS  
PowerPAK® SO-8  
•
•
DC/DC Primary Side Switch  
Telecom/Server 48 V,  
Full/Half-Bridge DC/DC  
D
S
6.15 mm  
5.15 mm  
1
S
2
•
•
Industrial  
S
3
G
Synchronous Rectification  
4
D
G
8
D
7
D
6
D
5
Bottom View  
S
N-Channel MOSFET  
Ordering Information:  
Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
100  
20  
Unit  
V
VGS  
TC = 25 °C  
27.8  
22.2  
10.4b, c  
8.2b, c  
70  
T
C = 70 °C  
A = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
T
C = 25 °C  
A = 25 °C  
25  
4.5b, c  
Continuous Source-Drain Diode Current  
T
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
15  
L =0.1 mH  
EAS  
mJ  
W
11.2  
35.7  
22.8  
5b, c  
3.2b, c  
TC = 25 °C  
TC = 70 °C  
PD  
Maximum Power Dissipation  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
20  
Maximum  
Unit  
t 10 s  
25  
°C/W  
Steady State  
RthJC  
2.9  
3.5  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
For technical questions, contact: pmostechsupport@vishay.com  
Document Number: 67869  
S12-1261-Rev. A, 21-May-12  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...13

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