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SI7456DDP-T1-GE3 PDF预览

SI7456DDP-T1-GE3

更新时间： 2024-11-21 20:10:07
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 313K
描述
Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

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SI7456DDP-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：12 weeks
风险等级：1.6雪崩能效等级（Eas）：11.2 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：27.8 A
最大漏源导通电阻：0.023 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-C5元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：70 A表面贴装：YES
端子形式：C BEND端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7456DDP-T1-GE3 数据手册

 浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第2页浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第3页浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第4页浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第5页浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第6页浏览型号SI7456DDP-T1-GE3的Datasheet PDF文件第7页 
New Product  
Si7456DDP  
Vishay Siliconix  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
•
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
Material categorization:  
I
D (A)a  
27.8  
27.2  
24  
VDS (V)  
RDS(on) () Max.  
0.023 at VGS = 10 V  
0.024 at VGS = 7.5 V  
0.031 at VGS = 4.5 V  
Qg (Typ.)  
For definitions of compliance please see  
www.vishay.com/doc?99912  
100  
9.7 nC  
APPLICATIONS  
PowerPAK® SO-8  
•
•
DC/DC Primary Side Switch  
Telecom/Server 48 V,  
Full/Half-Bridge DC/DC  
D
S
6.15 mm  
5.15 mm  
1
S
2
•
•
Industrial  
S
3
G
Synchronous Rectification  
4
D
G
8
D
7
D
6
D
5
Bottom View  
S
N-Channel MOSFET  
Ordering Information:  
Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
100  
20  
Unit  
V
VGS  
TC = 25 °C  
27.8  
22.2  
10.4b, c  
8.2b, c  
70  
T
C = 70 °C  
A = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
T
C = 25 °C  
A = 25 °C  
25  
4.5b, c  
Continuous Source-Drain Diode Current  
T
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
15  
L =0.1 mH  
EAS  
mJ  
W
11.2  
35.7  
22.8  
5b, c  
3.2b, c  
TC = 25 °C  
TC = 70 °C  
PD  
Maximum Power Dissipation  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
20  
Maximum  
Unit  
t 10 s  
25  
°C/W  
Steady State  
RthJC  
2.9  
3.5  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
For technical questions, contact: pmostechsupport@vishay.com  
Document Number: 67869  
S12-1261-Rev. A, 21-May-12  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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