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SI7459DP-T1-E3 PDF预览

SI7459DP-T1-E3

更新时间: 2024-11-21 20:55:59
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
6页 91K
描述
Trans MOSFET P-CH 30V 13A 8-Pin PowerPAK SO T/R

SI7459DP-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-XDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):13 A
最大漏极电流 (ID):13 A最大漏源导通电阻:0.0068 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):5.4 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7459DP-T1-E3 数据手册

 浏览型号SI7459DP-T1-E3的Datasheet PDF文件第2页浏览型号SI7459DP-T1-E3的Datasheet PDF文件第3页浏览型号SI7459DP-T1-E3的Datasheet PDF文件第4页浏览型号SI7459DP-T1-E3的Datasheet PDF文件第5页浏览型号SI7459DP-T1-E3的Datasheet PDF文件第6页 
Si7459DP  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Available  
0.0068 at VGS = - 10 V  
- 30  
- 22  
TrenchFET® Power MOSFETs  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
APPLICATIONS  
Battery and Load Switching  
- Notebook Computers  
PowerPAK SO-8  
- Notebook Battery Packs  
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
S
D
8
D
7
D
G
6
D
5
Bottom View  
D
Ordering Information:  
Si7459DP-T1-E3 (Lead (Pb)-free)  
Si7459DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
- 30  
25  
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 22  
- 17  
- 13  
- 10  
Continuous Drain Current (TJ = 150°C)a  
ID  
A
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
IDM  
IS  
- 60  
- 4.5  
5.4  
- 1.6  
1.9  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
3.4  
1.2  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
18  
Maximum  
Unit  
t 10 s  
Steady State  
Steady State  
23  
65  
Maximum Junction-to-Ambienta  
RthJA  
52  
°C/W  
Maximum Junction-to-Case (Drain)  
RthJC  
1.0  
1.5  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72631  
S09-0273-Rev. D, 16-Feb-09  
www.vishay.com  
1

SI7459DP-T1-E3 替代型号

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SI7459DP-T1-GE3 VISHAY

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