Datasheet > Si7469ADP

Si7469ADP

更新时间： 2023-12-06 20:10:24

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	268K
描述
P-Channel 80 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si7469ADP 数据手册

Si7469ADP

Vishay Siliconix

www.vishay.com

P-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV p-channel power MOSFET

PowerPAK^®SO-8 Single

• Very low R_DS(on)minimizes voltage drop and

reduces conduction loss

• Eliminates the need for charge pump

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Adapter and charger switch

• Battery and circuit protection

PRODUCT SUMMARY

V_DS(V)

-80

0.0193

0.027

19.3

• OR-ing

R_DS(on)max. () at V_GS= -10 V

R_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

• Load switch

• Motor drive control

I_D(A)

-46

Configuration

Single

P-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

Si7469ADP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

-80

+20 / -20

-46

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-36.8

-7.4 ^{b, c}

-5.9 ^{b, c}

-125

-66.8

-4.5 ^{b, c}

-40

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

-80

73.5

T_C= 70 °C

5 ^{b, c}

3.2 ^{b, c}

-55 to +150

260

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

1.35

1.7

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 65 °C/W

g. T_C= 25 °C

S20-0735-Rev. A, 28-Sep-2020

Document Number: 66831

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与Si7469ADP相关器件

型号	品牌	获取价格	描述	数据表
SI7469DP	VISHAY	获取价格	P-Channel 80-V (D-S) MOSFET
SI7469DP-T1-E3	VISHAY	获取价格	P-Channel 80-V (D-S) MOSFET
SI7469DP-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 80V 10.2A 8-Pin PowerPAK SO T/R
SI7470DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 40A I(D), 8V, 0.0021ohm, 1-Element, N-Channel, Silicon, Met
SI7476DP	VISHAY	获取价格	N-Channel 40-V (D-S) Fast Switching MOSFET
SI7476DP-T1-E3	VISHAY	获取价格	N-Channel 40-V (D-S) Fast Switching MOSFET
SI7476DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SI7478DP	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI7478DP_09	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI7478DP-T1-E3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET

与Si7469ADP相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

3
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

3
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

3
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

3

产品中心

服务支持

精选活动

关于我们

帮助中心

Si7469ADP

Si7469ADP 数据手册

与Si7469ADP相关器件

与Si7469ADP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

Si7469ADP

Si7469ADP 数据手册

与Si7469ADP相关器件

与Si7469ADP相关文章

您还可以找

您在本页遇到什么问题？