Datasheet > SI7476DP

SI7476DP

更新时间： 2024-11-20 22:22:15

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
5页	59K
描述
N-Channel 40-V (D-S) Fast Switching MOSFET

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SI7476DP 数据手册

Si7476DP

Vishay Siliconix

New Product

N-Channel 40-V (D-S) Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

0.0053 @ V = 10 V

0.0066 @ V = 4.5 V

APPLICATIONS

D Automotive*

− 12-V Boardnet

− High-Side Switches

− Motor Drives

PowerPAK SO-8

*Contact factory for automotive qualification

6.15 mm

5.15 mm

Bottom View

Ordering Information: Si7476DP-T1—E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

4.5

1.6

Avalanche Energy

180

= 25_C

= 70_C

5.4

3.4

1.9

1.2

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Case (Drain)

1.0

1.3

thJC

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72569

S-40577—Rev. B, 29-Mar-04

www.vishay.com

12 3 4 5

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