Datasheet > SI7478DP_09

SI7478DP_09

更新时间： 2024-01-14 18:58:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	467K
描述
N-Channel 60-V (D-S) MOSFET

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SI7478DP_09 数据手册

Si7478DP

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Available

TrenchFET^®Power MOSFET

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07 mm Profile

0.0075 at V_GS= 10 V

0.0088 at V_GS= 4.5 V

•

18.5

•

100 % R_gTested

PowerPAK SO-8

6.15 mm

5.15 mm

Bottom View

Si7478DP-T1-E3 (Lead (Pb)-free)

Ordering Information:

N-Channel MOSFET

Si7478DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150°C)^a

I_D

I_DM

I_S

I_AS

E_AS

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Avalanche Current

4.5

1.6

Avalanche Energy

T_A= 25 °C

T_A= 70 °C

5.4

3.4

1.9

1.2

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

R_thJA

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

1.0

1.3

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72913

S09-0271-Rev. D, 16-Feb-09

www.vishay.com

12 3 4 5 6 7...12

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