Datasheet > SI7495DP

SI7495DP

更新时间： 2024-09-29 21:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	69K
描述
P-Channel 12-V (D-S) MOSFET

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SI7495DP 数据手册

Si7495DP

Vishay Siliconix

New Product

P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

0.0065 @ V = -4.5 V

-21

-19

-16

APPLICATIONS

-12

0.008 @ V = -2.5

0.011 @ V = -1.8

D Load Switch

PowerPAK SO-8

6.15 mm

5.15 mm

P-Channel MOSFET

Bottom View

Ordering Information: Si7495DP-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

= 25_C

= 70_C

-13

-10

-21

-17

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-50

continuous Source Current (Diode Conduction)

-4.5

-1.6

1.8

= 25_C

= 70_C

Maximum Power Dissipation

3.2

1.1

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

1.7

2.2

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72277

S-31417—Rev. A, 07-Jul-03

www.vishay.com

12 3 4 5

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