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SI7613DN-T1-GE3 PDF预览

SI7613DN-T1-GE3

更新时间: 2024-11-21 19:54:27
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
13页 579K
描述
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R

SI7613DN-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.12外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.0087 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):52.1 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7613DN-T1-GE3 数据手册

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New Product  
Si7613DN  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)e,f  
Definition  
TrenchFET® Power MOSFET  
0.0087 at VGS = - 10 V  
0.014 at VGS = - 4.5V  
- 35  
- 35  
- 20  
28.1 nC  
Low Thermal Resistance PowerPAK®  
Package with Small Size and Low 1.07 mm  
Profile  
100 % Rg Tested  
Compliant to RoHS Directive 2002/95/EC  
PowerPAK 1212-8  
APPLICATIONS  
Load Switch  
Adaptor Switch  
Notebook PC  
S
3.30 mm  
3.30 mm  
S
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
Bottom View  
D
Ordering Information: Si7613DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
16  
- 35e  
- 35e  
- 17a, b  
- 13.6a, b  
- 60  
- 35e  
- 3.2a, b  
T
C = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
TC = 25 °C  
52.1  
T
C = 70 °C  
A = 25 °C  
33.3  
PD  
Maximum Power Dissipation  
W
3.8a, b  
2.4a, b  
- 50 to 150  
260  
T
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c, d  
°C  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
e. Package limited.  
f. Based on TC = 25 °C  
Document Number: 64809  
S09-0662-Rev. A, 20-Apr-09  
www.vishay.com  
1

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