Datasheet > SI7629DN

SI7629DN

更新时间： 2024-02-01 05:58:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	576K
描述
P-Channel 20 V (D-S) MOSFET

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SI7629DN 数据手册

New Product

Si7629DN

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

I_D(A)

- 35^a

Q_g(Typ.)

0.0046 at V_GS= - 10 V

0.0062 at V_GS= - 4.5 V

0.0117 at V_GS= - 2.5 V

•

TrenchFET Gen III P-Channel Power MOSFET

- 20

59 nC

100 % R_gTested

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Adaptor Switch

Battery Switch

Load Switch

PowerPAK 1212-8

3.30 mm

Bottom View

Ordering Information: Si7629DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 35^a

- 21.3^{b, c}

- 17.1^{b, c}

- 80

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

- 35^a

T_C= 25 °C

Continuous Source-Drain Diode Current

- 3.3^{b, c}

- 20

T_A= 25 °C

Avalanche Current

I_AS

L = 0.1 mH

Single Pulse Avalanche Energy

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

Maximum Power Dissipation

P_D

3.7^{b, c}

2.4^{b, c}

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

Steady State

R_thJC

1.9

2.4

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 81 °C/W.

Document Number: 70556

S10-1538-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7...13

中文翻译

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与SI7629DN相关器件

型号	品牌	获取价格	描述	数据表
SI7629DN-T1-GE3	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI7633DP-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 20V 34A 8-Pin PowerPAK SO T/R
SI7634BDP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7634DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7636DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7636DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 30V 17A 8-Pin PowerPAK SO T/R
SI7636DP-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SI7652BA	VISHAY	获取价格	Operational Amplifier, 1 Func, 5uV Offset-Max, CMOS, MBCY8

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