Datasheet > SI7655DN

SI7655DN

更新时间： 2024-01-14 10:24:26

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	221K
描述
P-Channel 20 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7655DN 数据手册

New Product

Si7655DN

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

Low Thermal Resistance PowerPAK^®

V_DS(V)

R_DS(on)() Max.

I_D(A)

Q_g(Typ.)

•

Package with Small Size and Low 0.75 mm

Profile

100 % R_gand UIS Tested

Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

- 40^e

0.0036 at V_GS= - 10 V

0.0048 at V_GS= - 4.5 V

0.0085 at V_GS= - 2.5 V

- 20

72 nC

•

PowerPAK 1212-8S

APPLICATIONS

3.3 mm

•

Smart Phones, Tablet PCs, Mobile

Computing

0.75 mm

- Battery Switch

- Load Switch

3.3 mm

BottomView

Ordering Information:

Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 40^e

- 31^{a, b}

- 25^{a, b}

- 100

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

- 40^e

- 4^{a, b}

- 20

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

4.8^{a, b}

3^{a, b}

Single-Pulse Avalanche Energy

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

- 50 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

Document Number: 63617

S12-2393-Rev. B, 15-Oct-12

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SI7655DN相关器件

型号	品牌	获取价格	描述	数据表
SI7655DN-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SI7658ADP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7658ADP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7658DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7658DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7660AA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660AA/883	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660BA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660CA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660CJ	VISHAY	获取价格	Analog Circuit, CMOS, PDIP8