Datasheet > SI7658ADP

SI7658ADP

更新时间： 2024-02-19 13:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	143K
描述
N-Channel 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7658ADP 数据手册

New Product

Si7658ADP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

TrenchFET^®Gen III Power MOSFET

100 % R_gTested

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^{a, g}

RoHS

60^g

0.0022 at V_GS= 10 V

0.0028 at V_GS= 4.5 V

COMPLIANT

34 nC

• 100 % Avalanche Tested

PowerPAK^®SO-8

APPLICATIONS

•

Low-Side Switch for DC/DC Converters

- Servers

- POL

- VRM

6.15 mm

5.15 mm

OR-ing

Bottom View

Ordering Information: Si7658ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

60^g

36^{b, c}

29^{b, c}

60^g

4.9^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

125

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

5.4^{b, c}

3.4^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

°C/W

Steady State

R_thJC

1.0

1.5

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 65 °C/W.

g. Package Limited.

Document Number: 68640

S-81218-Rev. A, 02-Jun-08

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

与SI7658ADP相关器件

型号	品牌	获取价格	描述	数据表
SI7658ADP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7658DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7658DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7660AA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660AA/883	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660BA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660CA	VISHAY	获取价格	Analog Circuit, CMOS, MBCY8
SI7660CJ	VISHAY	获取价格	Analog Circuit, CMOS, PDIP8
SI7660CY	VISHAY	获取价格	Analog Circuit, CMOS, PDSO8
SI7660DJ	VISHAY	获取价格	Analog Circuit, CMOS, PDIP8