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SI7658DP-T1-GE3 PDF预览

SI7658DP-T1-GE3

更新时间: 2024-11-25 21:14:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 98K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI7658DP-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.82
配置:Single最大漏极电流 (Abs) (ID):60 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

SI7658DP-T1-GE3 数据手册

 浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第2页浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第3页浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第4页浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第5页浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第6页浏览型号SI7658DP-T1-GE3的Datasheet PDF文件第7页 
Si7658DP  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free available  
TrenchFET® Power MOSFET  
100 % Rg Tested  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
RoHS  
60g  
60g  
0.0024 at VGS = 10 V  
0.00325 at VGS = 4.5 V  
COMPLIANT  
30  
48.5 nC  
100 % Avalanche Tested  
PowerPAK SO-8  
APPLICATIONS  
Low-side Switch for DC/DC Converters  
S
- Servers  
- POL  
- VRM  
6.15 mm  
5.15 mm  
1
S
2
S
D
3
G
4
OR-ing  
D
8
D
7
D
6
G
D
5
Bottom View  
S
Ordering Information: Si7658DP-T1-E3 (Lead (Pb)-free)  
Si7658DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
60g  
60g  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
37b, c  
29.8b, c  
100  
60g  
5.6b, c  
50  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
L = 0.1 mH  
EAS  
mJ  
W
125  
104  
66.6  
6.25b, c  
4.0b, c  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
PD  
Maximum Power Dissipation  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 s  
15  
20  
°C/W  
Steady State  
RthJC  
0.9  
1.2  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed cop-  
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 54 °C/W.  
g. Package Limited.  
Document Number: 74966  
S-80440-Rev. B, 03-Mar-08  
www.vishay.com  
1

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