5秒后页面跳转
SI7625DN PDF预览

SI7625DN

更新时间: 2024-02-18 19:10:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 131K
描述
P-Channel 30 V (D-S) MOSFET

SI7625DN 数据手册

 浏览型号SI7625DN的Datasheet PDF文件第2页浏览型号SI7625DN的Datasheet PDF文件第3页浏览型号SI7625DN的Datasheet PDF文件第4页浏览型号SI7625DN的Datasheet PDF文件第5页浏览型号SI7625DN的Datasheet PDF文件第6页浏览型号SI7625DN的Datasheet PDF文件第7页 
New Product  
Si7625DN  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
100% Rg Tested  
100% UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
- 35d  
- 35d  
0.007 at VGS = - 10 V  
0.011 at VGS = - 4.5 V  
- 30  
39.5 nC  
PowerPAK® 1212-8  
APPLICATIONS  
S
S
Notebook Adapter Switch  
Notebook Load Switch  
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View  
Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
- 35d  
- 35d  
- 17.3a, b  
- 13.8a, b  
- 80  
- 35d  
- 3.0a, b  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
IAS  
Avalanche Current  
- 20  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
52  
33  
PD  
Maximum Power Dissipation  
3.7a, b  
2.4a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)e, f  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
26  
Maximum  
Unit  
°C/W  
Maximum Junction-to-Ambienta, c  
t 10 s  
Steady State  
33  
Maximum Junction-to-Case  
1.9  
2.4  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under steady state conditions is 81 °C/W.  
d. Package limited.  
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
www.vishay.com  
1

与SI7625DN相关器件

型号 品牌 获取价格 描述 数据表
SI7625DN-T1-GE3 VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SI7629DN VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SI7629DN-T1-GE3 VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SI7633DP-T1-GE3 VISHAY

获取价格

Trans MOSFET P-CH 20V 34A 8-Pin PowerPAK SO T/R
SI7634BDP VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-E3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-GE3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634DP-T1-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7636DP VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7636DP-T1-E3 VISHAY

获取价格

Trans MOSFET N-CH 30V 17A 8-Pin PowerPAK SO T/R