Datasheet > SI7621DN-T1-GE3

SI7621DN-T1-GE3

更新时间： 2023-12-18 00:00:00

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
MOSFET P-CH 20V 4A 1212-8 PPAK

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SI7621DN-T1-GE3 数据手册

Si7621DN

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

- 4^c

0.090 at V_GS= - 4.5 V

0.180 at V_GS= - 2.5 V

•

TrenchFET^®Power MOSFET: 2.5 V Rated

PowerPAK^®Package

- 20

3.8 nC

- Low Thermal Resistance

- Low 1.07 mm Profile

•

100 R_gTested

Compliant to RoHS Directive 2002/95/EC

PowerPAK 1212-8

APPLICATIONS

•

Load Switching

HDD

3.30 mm

Bottom View

Ordering Information: Si7621DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

- 4^c

- 4^{a, b, c}

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

T_A= 25 °C

T_A= 70 °C

- 3.8^{a, b}

I_DM

I_S

Pulsed Drain Current

- 15

- 4^c

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

Continuous Source-Drain Diode Current^{a, b}

- 2.6^{a, b}

12.5

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation^{a, b}

P_D

3.1^{a, b}

2^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Package limited.

d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 65544

S09-2272-Rev. A, 02-Nov-09

www.vishay.com

12 3 4 5 6 7

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